2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. WINTransceiver B E C Features: High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Application: 4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = Infinity), VCEO 17VBase Voltage, VCBO 35VEmitter- EBO 4VCollector Current, IC 12ACollector Power Dissipation (TA = +25°C), PD 1.5WC = +50°C), P 12.5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-toCase, RthJC 10°C/WAmbient, RthJA 83°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter SymbolTest Conditions MinTypMaxUnitCollector-Base Breakdown Voltage V(BR)CBOIC = 10mA, IE = 0 35 - - V CollectorEmitter Breakdown Voltage (BR)CEO = 50mA, RBE = Infinity 17 Emitter-Base Breakdown Voltage V(BR)EBOIE = 5mA, IC = 0 4 - - V Collector Cutoff Current ICBO CB = 25V IE - 500µAEmitter Cutoff Current EBO EB = 3V, IC = 0 - µADC Forward Current Gain hFE VCE = 10V, I = 100mA, Note 1 10 50180Power Output PO 6 7 - W Collector Efficiency CC = 13.5V, Pin = 600mW, f = 175MHz 60 70 %