Power Transistors www.jmnic.com
2SC2334
Silicon NPN Transistors




null Features B C E
﹒With TO-220 package
﹒Complement to type 2SA1010
﹒For high speed switching industrial use
null Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
V
CBO
Collector to base voltage 150 V
V
CEO
Collector to emitter voltage 100 V
V
EBO
Emitter to base voltage 7 V
I
CP
Peak collector current 15 A
I
C
Collector current 7 A
P
C
Collector power dissipation 40 W
T
j
Junction temperature 150
T
stg
Storage temperature -55~150
TO-220
null Electrical Characteristics Tc=25
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
I
CBO
Collector-base cut-off current V
CB
=100V; I
E
=0

10 A
I
EBO
Emitter-base cut-off current V
EB
=5V; I
C
=0

10 A
I
CEO
Collector-emitter cut-off current


V
CBO
Collector-base breakdown voltage


V
(BR)ceo
Collector-emitter breakdown voltage I
C
=200mA; I
B
=0 100

V
V
EBO
Emitter-base breakdown voltage


V
CE(sat-1)
Collector-emitter saturation voltages I
C
=5A; I
B
=0.5A 0.6 V
V
CE(sat-2)
Collector-emitter saturation voltages


h
FE-1
Forward current transfer ratio I
C
=3A; V
CE
=5V 40 240
h
FE-2
Forward current transfer ratio I
C
=0.5A; V
CE
=5V 40
h
FE-3
Forward current transfer ratio I
C
=5A; V
CE
=5V 20
V
BE(sat)1
Base-emitter saturation voltages I
C
=5A; I
B
=0.5A 1.5 V
t
on
Turn-on time

0.5 s
t
stg
Storage time 0.5 s
t
f
Fall time
V
CC
=50V I
C
=5A
I
B1
=-I
B2
=0.5A
R
L
=50
1.5 s
null h
FE-2
classification
R O Y
40-80 70-140 120-240


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