Power Transistors www.jmnic.com
2SC1030
Silicon NPN Transistors


1B 2E 3C
null Features
With TO-3 package
Low frequency power amplifications

null Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
V
CBO
Collector to base voltage 150 V
V
CEO
Collector to emitter voltage 80 V
V
EBO
Emitter to base voltage 6 V
I
C
Collector current-Continuous 6 A
P
D
Total Power Dissipation@TC=25 50 W
T
j
Junction temperature 200
T
stg
Storage temperature -55~200
TO-3
null Electrical Characteristics Tc=25
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
CEO
Collector-Emitter Sustaining Voltage I
C
=0.2A; I
B
=0 80 V
V
CER
Collector-Emitter Sustaining Voltage
I
CEO
Collector Cutoff Current V
CE
=30V; I
B
=0 2.0 mA
I
EBO
Emitter Cutoff Current V
EB
=6V; I
C
=0 1.0 mA
I
CBO
Collector Cutoff Current V
CB
=30V; I
E
=0 1.0 mA
V
EBO
Base-emitter breakdown voltage
V
CE(sat-1)
Collector-emitter saturation voltages I
C
=5.0A; I
B
=1.0A 1.5 V
V
CE(sat-2)
Collector-emitter saturation voltages
V
CE(sat-3)
Collector-emitter saturation voltages
h
FE-1
Forward current transfer ratio I
C
=1A; V
CE
=5V 35 200
h
FE-2
Forward current transfer ratio I
C
=5A; V
CE
=5V 22
h
FE-3
Forward current transfer ratio
V
BE(on)
Base-emitter On voltages
f
T
Current Gain-Bandwidth Product I
C
=1A; V
CE
=5V 10 MHz
h
fe
Small-Signal Current Gain







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