NPN SILICON PLANAR TRANSISTOR 2N657
TO-39
Metal Can Package
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emitter Voltage V
CEO
100 V
Collector Base Voltage V
CBO
100 V
Emitter Base Voltage V
EBO
8.0 V
Collector Current I
C
0.5 A
Power Dissipation @ Ta=25ºC P
D
1.0 W
Derate Above 25ºC 5.7 mW/ºC
Power Dissipation@ Tc=25ºC P
D
4.0 W
Derate Above 25ºC 22.8 mW/ºC
Operating And Storage Junction T
j
, T
stg
-65 to +200 ºC
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Collector Emitter Voltage V
CEO
I
C
=250µA,I
B
=0 100 V
Collector Base Voltage V
CBO
I
C
=100µA,I
E
=0 100 V
Emitter Base Voltage V
EBO
I
C
=250µA,Ic=0 8.0 V
Collector Cut off Current I
CBO
V
CB
=30V, I
E
=0 10 µA
DC Current Gain h
FE
I
C
=200mA,V
CE
=10V 30 90
Collector Emitter Saturation Voltage *V
CE(Sat)
I
C
=200mA,I
B
=40mA 4.0 V
SMALL SIGNAL CHARACTERISTICS
Input Impedance * | h
fe
|I
B
=8mA, V
CE
=10V 0.5 KΩ
*Pulse Test: Pulse Length= 300µs, Duty Cycle <2%
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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