TECHNICAL DATA

SILICON NPN TRANSISTOR

Devices
2N6232




10 AMP
100 V
• FAST SWITCHING
• LOW SATURATION VOLTAGE


MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage
V
CEO

100 Vdc
Collector-Base Voltage
V
CBO

140 Vdc
Emitter-Base Voltage
V
EBO

7.0 Vdc
Collector Current – Peak
(1)

I
C

10 Adc
Base Current – Continuous I
B
Adc
Total Power Dissipation @ T
C
= 25
0
C
P
D

1.25 W
W/
0
C
Operating & Storage Junction Temperature Range
T
J,
T
stg

-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC

6.67
0
C/W


(1) Pulse Test: Pulse Width = Duty Cycle < %






TO-5


ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(2)

I
C
= 100 mAdc, I
B
= 0

V
CEO(sus)


100

Vdc
Collector-Emitter Cutoff Current
V
CE
= 140 Vdc, R
be
= 0

I
CES


0.2

uAdc
Collector Cutoff Current
V
CE
= 100 Vdc, RBE = 0 Ω, T
C
= 150
0
C

I
CES


0.1

mAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc, I
C
= 0

I
EBO


10

uAdc


6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
10604
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