BS62LV4008EC
器件描述:Very Low Power/Voltage CMOS SRAM 512K X 8 bit
文件大小:373.7KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 1.1
Jan. 2004
1
R0201-BS62LV4008
Very Low Power/Voltage CMOS SRAM
512K X 8 bit
• Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 29mA (@55ns) operating current
I -grade: 30mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
0.45uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Fully static operation
The BS62LV4008 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA at 3.0V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) , and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4008 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4008 is available in the JEDEC standard 32L SOP, TSOP
, PDIP, TSOP II and STSOP package.