General Description
The AAT7357 is a low threshold dual MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech™'s ultra high density
MOSFET process and space saving small outline J-
lead package, performance superior to that normal-
ly found in a TSSOP-8 footprint has been squeezed
into the footprint of a TSOPJW-8 package.
Applications
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
Features
•V
DS(MAX)
= -20V
•I
D(MAX)
1
= -5A @ 25°C
• Low R
DS(ON)
:
• 39 mΩ @ V
GS
= -4.5V
• 63 mΩ @ V
GS
= -2.5V
Dual TSOPJW-8 Package
D1 D1 D2 D2
S1 G1 S2 G2
Top View
1234
8765
AAT7357
20V P-Channel Power MOSFET
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Typ Max Units
R
θJA
Junction-to-Ambient steady state, one FET on
1
115 140 °C/W
R
θJA2
Junction-to-Ambient t<5 seconds
1
64 78 °C/W
R
θJF
Junction-to-Foot
1
60 72 °C/W
Symbol Description Value Units
V
DS
Drain-Source Voltage -20
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±5
T
A
= 70°C ±4
A
I
DM
Pulsed Drain Current
2
±12
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.3
P
D
Maximum Power Dissipation
1
T
A
= 25°C 1.6
W
T
A
= 70°C 1.0
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C
Advanced Information
7357.2003.08.0.6 1