2N7002MTF
BV
DSS
= 60 V
R
DS(on)
= 5.0 Ω
I
D
= 200 mA
60
115
73
800
±20
0.2
0.16
- 55 to +150
62.5--
! Lower R
DS(on)
! Improved Inductive Ruggedness
! Fast Switching Times
! Lower Input Capacitance
! Extended Safe Operating Area
! Improved High Temperature Reliability
Advanced Small Signal MOSFET
Thermal Resistance
Junction-to-AmbientR
θJA
℃/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed ①
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Characteristic Value UnitsSymbol
I
DM
V
GS
I
D
P
D
T
J
, T
STG
mA
V
W
W/℃
mA
V
DSS
V
SOT-23
1.Gate 2. Source 3. Drain
℃
Rev. A1
Product Summary
Part Number BV
DSS
R
DS
(on) I
D
2N7002 60V 5.0Ω 115mA