器件资料摘要：
6N1135/ 6N1136
Document Number 83909
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179081
1
2
3
4
8
7
6
5
C(VCC)NC
A
C
NC
B(VB)
C(VO)
E (GND)
Pb
Pb-free
e3
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
Isolation Test Voltage: 5300 V
RMS
TTL Compatible
High Bit Rates: 1.0 MBd
Bandwidth 2.0 MHz
Open-Collector Output
External Base Wiring Possible
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL 1577 - File No. E52744 System Code H or J
DIN EN 60747-5-2 (VDE0884)
CUL - File No. E52744, equivalent to CSA bulletin
5A
Description
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part Remarks
6N1135 CTR ≥ 7 %, DIP-8
6N1136 CTR ≥ 19 %, DIP-8
6N1135-X007 CTR ≥ 7 %, SMD-8 (option 7)
6N1136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6)
6N1136-X007 CTR ≥ 19 %, SMD-8 (option 7)
6N1136-X009 CTR ≥ 19 %, SMD-8 (option 9)
Parameter Test condition Symbol Value Unit
Reverse voltages V
R
5.0 V
Forward current I
F
25 mA
Peak forward current t = 1.0 ms, duty cycle 50 % I
FM
50 mA
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s I
FSM
1.0 A
Thermal resistance R
th
700 K/W
Power dissipation T
amb
= 70 °C P
diss
45 mW
Document Number 83909
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179081
1
2
3
4
8
7
6
5
C(VCC)NC
A
C
NC
B(VB)
C(VO)
E (GND)
Pb
Pb-free
e3
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
Isolation Test Voltage: 5300 V
RMS
TTL Compatible
High Bit Rates: 1.0 MBd
Bandwidth 2.0 MHz
Open-Collector Output
External Base Wiring Possible
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL 1577 - File No. E52744 System Code H or J
DIN EN 60747-5-2 (VDE0884)
CUL - File No. E52744, equivalent to CSA bulletin
5A
Description
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part Remarks
6N1135 CTR ≥ 7 %, DIP-8
6N1136 CTR ≥ 19 %, DIP-8
6N1135-X007 CTR ≥ 7 %, SMD-8 (option 7)
6N1136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6)
6N1136-X007 CTR ≥ 19 %, SMD-8 (option 7)
6N1136-X009 CTR ≥ 19 %, SMD-8 (option 9)
Parameter Test condition Symbol Value Unit
Reverse voltages V
R
5.0 V
Forward current I
F
25 mA
Peak forward current t = 1.0 ms, duty cycle 50 % I
FM
50 mA
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s I
FSM
1.0 A
Thermal resistance R
th
700 K/W
Power dissipation T
amb
= 70 °C P
diss
45 mW