Power Transistors
1
Publication date: September 2003 SJD00278BED
2SD2573
Silicon NPN triple diffusion planar type
For high current amplification, power amplification
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 25 mA, I
B
= 0 60 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 80 V, I
E
= 0 100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 40 V, I
B
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 6 V, I
C
= 0 100 µA
Forward current transfer ratio
*
h
FE
V
CE
= 4 V, I
C
= 0.5 A 500 2 500 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 2 A, I
B
= 0.05 A 1.0 V
Transition frequency f
T
V
CE
= 12 V, I
C
= 0.2 A, f = 10 MHz 50 MHz
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
6V
Collector current I
C
3A
Peak collector current I
CP
6A
Collector power dissipation T
C
= 25°CP
C
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank P Q R
h
FE
500 to 1 000 800 to 1 500 1 200 to 2 500
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
10.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90˚
2.5
±
0.1
1: Emitter
2: Collector
3: Base
MT-3-A1 Package