TECHNICAL DATA

PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/315
Devices Qualified Level
2N2880 2N3749




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector - Emitter Voltage V CEO 80 Vdc
Collector - Base Voltage V C BO 110 Vdc
Emitter - Base Voltage V EBO 8.0 Vdc
Base Current I B 0.5 Adc
Collector Current I C 5.0 Adc
Total Power Dissipation @ T A = 25 0 C (1)
@ T C = 100 0 C (2) P T
2.0
30 W
Operating & Storage Junction Temperatu re Range T op , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 3.33 0 C/W
1) Derate linearly 11.4 mW/ 0 C for T A > 25 0 C
2) Derate linearly 300 mW/ 0 C for T C > 100 0 C





TO - 59*
*Se e Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 100 mAdc V (BR) CEO 80 Vdc
Collector - Emitter Breakdown Voltage
I C = 10 µAdc V (BR) CBO 110 Vdc
Emitter - Base Breakdown to Voltage
I E = 10 µAdc V (BR) EBO 8.0 Vdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc I CEO 20 µAdc
Collector - Base Cutoff Current
V CB = 80 Vdc I CBO 0.2 µAdc
Collector - Emitter Cutoff Current
V CE = 110 Vdc, V BE = - 0.5 I CEX 1.0 µAdc
Emitter - Base Cutoff Current
V EB = 6.0 Vdc I EBO 0.2 µAdc
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