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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BS170P

器件描述:N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
器件厂商:ZETEX [Zetex Semiconductors]
厂商主页:http://www.zetex.com/
文件大小:22.09KB,共1页
Sponsor by e络盟
器件资料摘要:
N-C
H
A
NNE
L ENH
ANCE
ME
NT
MOD
E
VE
RT
ICA
L D
M
OS FE
T
ISSU
E 2 –
SEPT
9
3
FEATU
RES
*
6
0 Volt

V
DS
*R
DS(
o
n
)
=5

R
E
F
E
R

TO
ZVN3306A FO
R G
R
A
PHS
AB
S
OLUTE M
A
X
I
M
U
M

R
ATINGS
.
P
A
R
A
M
E
T
E
R
S
Y
M
B
O
L
V
ALUE
UNIT
D
r
ain
-
S
ource Voltage
V
DS
60
V
Co
n
t
i
n
u
o
u
s

D
rai
n
C
u
r
ren
t at T
am
b
=2

C
I
D
27
0
m
A
P
u
l
s
ed
Dra
i
n
Cu
rre
n
t
I
DM
3A
G
a
te-Source Vol
t
ag
e
V
GS
±
20
V
Po
we
r
D
i
ssi
pa
t
i
on
a
t
T
am
b
=25
°
C
P
to
t
62
5
m
W
O
p
er
ati
n
g
an
d
S
t
o
r
ag
e T
e
m
p
er
atu
r
e

Ra
n
g
e
T
j
:T
stg
-
5
5
to +1
5
0
°C
ELEC
TRIC
AL
C
HAR
AC
T
E
R
I
S
TIC
S (at

T
amb
= 25
°C
)
.
PA
RA
ME
TER
SYMBO
L
M
IN
.
T
YP.
M
A
X
.
U
N
I
T
C
ON
D
I
TIO
N
S.
D
r
a
i
n
-
S
our
ce
Bre
a
kdo
w
n Voltage
BV
DS
S
60
V
I
D
=1
00
µ
A,
V
GS
=0V
G
a
te-Source
Th
r
e
sho
l
d Volta
g
e
V
G
S
(th
)
0.
8
3
V
I
D
=1
m
A
,
V
DS
=V
GS
Ga
t
e
Bod
y

Le
a
k
ag
e
I
GS
S
1
0
nA
VGS=
15V, V
DS
=0V
Ze
r
o
G
a
t
e
Vo
lt
ag
e
Dr
ai
n
Cu
rr
en
t
I
DS
S
0.5
µ
A
V
GS
=0V
,
V
DS
=25V
Static D
r
ain-So
urce
on
-Sta
te Resistance (1
)
R
D
S
(
on)
5

V
GS
=10
V
, I
D
=2
00m
A
Fo
rwar
d
T
r
a
n
s
c
o
nd
uc
t
a
nc
e
(
1
)
(
2
)
g
fs
200
m
S
V
DS
=1
0V
,
I
D
=
200m
A
In
put Ca
p
a
cita
nce
(2
)
C
is
s
60
p
F
V
GS
=0V
,
V
DS
=10V
f=
1MHz
Tu
r
n
-On
Time
(2
)(
3
)
t
(o
n
)
10
n
s
V
DD

15
V
,
I
D
=
600m
A
Tu
r
n
-O
ff
Ti
me
(
2
)(3)
t
(o
ff)
10
n
s
(
1
) Me
asur
ed und
e
r
pulse
d
c
o
nditions. Pulse width=
3
0
0
µ
s. Dut
y cy
cle

2
%
(
2) Sa
mple t
est
(
3
) Switc
h
ing time
s me
asur
ed with a
50

sou
r
c
e
impedance
and <5
ns ris
e time

o
n
a
pulse ge
n
e
r
a
tor
BS1
70P
3-
2
7
D
G


S E
-
Line
T
O
9
2
Compat
ible