Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower gate charge BV
DSS
20V
▼ Capable of 2.5V gate drive R
DS(ON)
50mΩ
▼ Single Drive Requirement I
D
4A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 100 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 1.25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.01
Continuous Drain Current, V
GS
@ 4.5V
3
2.5
Pulsed Drain Current
1
12
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
3
4
Parameter Rating
Drain-Source Voltage 20
201224031
AP9452G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
±16
G
D
S
D
G
D
S
SOT-89