器件资料摘要：
SRAM
AS5C2568
Austin Semiconductor, Inc.
AS5C2568
Rev. 2.0 12/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
• Access Times: 12, 15, & 20ns
• Fast output enable (tDOE) for cache applications
• Low active power: 400 mW (TYP)
• Low power standby
• Fully static operation, no clock or refresh required
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
OPTIONS MARKING
• Timing
12ns access* -12
15ns access -15
20ns access -20
• Package(s)**
Plastic SOJ DJ No. 906
• Operating Temperature Ranges
Military -55
o
C to +125
o
C XT
Industrial -40
o
C to +85
o
C I
* -12 available in IT only.
** For ceramic version of this product, see the MT5C2568
data sheet.
PIN ASSIGNMENT
(Top View)
28-PIN PSOJ (DJ)
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low power CMOS designs using a four-transistor
memory cell. These SRAMs are fabricated using double-layer
metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications, Aus-
tin Semiconductor offers chip enable (CE\) and output enable
(OE\) capability. These enhancements can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ and OE\ go LOW.
The device offers a reduced power standby mode when dis-
abled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
32K x 8 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.austinsemiconductor.com
A14 1 28 V
CC
A12 2 27 WE\
A7 3 26 A13
A6 4 25 A8
A5 5 24 A9
A4 6 23 A11
A3 7 22 OE\
A2 8 21 A10
A1 9 20 CE\
A0 10 19 I/O7
I/O0 11 18 I/O6
I/O1 12 17 I/O5
I/O2 13 16 I/O4
GND 14 15 I/O3
AS5C2568
Austin Semiconductor, Inc.
AS5C2568
Rev. 2.0 12/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
• Access Times: 12, 15, & 20ns
• Fast output enable (tDOE) for cache applications
• Low active power: 400 mW (TYP)
• Low power standby
• Fully static operation, no clock or refresh required
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
OPTIONS MARKING
• Timing
12ns access* -12
15ns access -15
20ns access -20
• Package(s)**
Plastic SOJ DJ No. 906
• Operating Temperature Ranges
Military -55
o
C to +125
o
C XT
Industrial -40
o
C to +85
o
C I
* -12 available in IT only.
** For ceramic version of this product, see the MT5C2568
data sheet.
PIN ASSIGNMENT
(Top View)
28-PIN PSOJ (DJ)
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low power CMOS designs using a four-transistor
memory cell. These SRAMs are fabricated using double-layer
metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications, Aus-
tin Semiconductor offers chip enable (CE\) and output enable
(OE\) capability. These enhancements can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ and OE\ go LOW.
The device offers a reduced power standby mode when dis-
abled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
32K x 8 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.austinsemiconductor.com
A14 1 28 V
CC
A12 2 27 WE\
A7 3 26 A13
A6 4 25 A8
A5 5 24 A9
A4 6 23 A11
A3 7 22 OE\
A2 8 21 A10
A1 9 20 CE\
A0 10 19 I/O7
I/O0 11 18 I/O6
I/O1 12 17 I/O5
I/O2 13 16 I/O4
GND 14 15 I/O3