2SK3441
2002-02-06 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441

DC-DC Converter
Relay Drive and Motor Drive Applications



Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 4.5 mΩ (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 80 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 60 V)
Gb7G20 Enhancement-mode: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
60 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
60 V
Gate-source voltage V
GSS
Gb120 V
DC (Note 1) I
D
75
Drain current
Pulse (t
G3c
G3d
1 ms)
(Note 1)
I
DP
300
A
Drain power dissipation (Tc G3d 25°C) P
D
125 W
Single pulse avalanche energy
(Note 2)
E
AS
468 mJ
Avalanche current I
AR
75 A
Repetitive avalanche energy (Note 3) E
AR
12.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55 to 150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.00 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
G3d 25 V, T
ch
G3d 25°C (initial), L G3d 113 G6dH, R
G
G3d 25 G57,
I
AR
G3d 75 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.


Unit: mm


JEDEC ―
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)

Circuit Configuration


Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
1
2
3
4