Power Transistors
1
Publication date: March 2003 SJD00038BED
2SB1054
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1485
■ Features
• Excellent collector current I
C
characteristics of forward current
transfer ratio h
FE
• Wide safe operation area
• High transition frequency f
T
• Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
15.0±0.3 5.0±0.2
11.0±0.2
2.0±0.2 2.0±0.1
0.6±0.21.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±
0.5
16.2
±
0.5
Solder Dip
(3.5)
15.0
±
0.2
(0.7)
φ 3.2±0.1
(3.2)
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage V
BE
V
CE
= −5 V, I
C
= −3 A −1.8 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −100 V, I
E
= 0 −50 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −3 V, I
C
= 0 −50 µA
Forward current transfer ratio h
FE1
V
CE
= −5 V, I
C
= −20 mA 20 
h
FE2

*
V
CE
= −5 V, I
C
= −1 A 40 200
h
FE3
V
CE
= −5 V, I
C
= −3 A 20
Collector-emitter saturation voltage V
CE(sat)
I
C
= −3 A, I
B
= − 0.3 A −2.0 V
Transition frequency f
T
V
CE
= −5 V, I
C
= − 0.5 A, f = 1 MHz 20 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 170 pF
(Common base, input open circuited)
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−100 V
Collector-emitter voltage (Base open) V
CEO
−100 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−5A
Peak collector current I
CP
−8A
Collector power dissipation P
C
60 W
T
a
= 25°C3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Rank R Q P
h
FE2
40 to 80 60 to 120 100 to 200
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package