TECHNICAL DATA

NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/456
Devices Qualified Level
2N5302 2N5303




JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N5302 2N5303 Unit
Collector - Emitter Voltage V CEO 60 80 Vdc
Collector - Base Voltage V CBO 60 80 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Collector Current I C 30 20 Adc
Base Current I B 7.5 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +100 0 C (2) P T
5.0
115
W
W/ 0 C
Operating & Storage Junc tion Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 0.875 0 C/W
1) Derate linearly 28.57 mW/ 0 C for T A = +25 0 C
2) Derate linearly 1.14 W/ 0 C for T C = +100 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Current
I C = 200 mAdc, I B = 0 2N5302
2N5303

V (BR) CEO

60
80

Vdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc, I B = 0 2N5302
V CE = 80 Vdc, I B = 0 2N5303

I CEO

10
10

µAdc

Emitter - Base Cutoff Current
V EB = 5.0 Vdc, I C = 0 I EBO 5.0 µAdc
Collector - Emitter Cutoff Current
V BE = 1.5 Vdc, V CE = 60 V dc 2N5302
V BE = 1.5 Vdc, V CE = 80 V dc 2N5303

I CEX


5.0
5.0

µAdc

Collector - Emitter Cutoff Current
V CE = 60 Vdc 2N5302
V CE = 80 Vdc 2N5303

I CBO

5.0
5.0

µAdc

6 Lake Street, Lawrence, MA 01841
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120101
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TO - 3*
(TO - 204AA)