TECHNICAL DATA

NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
2N2218
2N2218A
2N2218AL
2N2219
2N2219A
2N2219AL




JAN
JANTX
JANTXV
JANS

MAXIMUM RATINGS
Ratings Symbol 2N2218 2N2219 2N2218A; L 2N2219A; L Unit
Collector - Emitter Voltage V CEO 30 50 Vdc
Collector - Base Voltage V CBO 60 75 Vdc
Emitter - Base Voltage V EBO 5.0 6.0 Vdc
Collector Current I C 800 mAdc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
0.8
3 .0
W
W
Operating & Storage Junction Temp. Range T op , T stg - 55 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 59 0 C/W
1) Derate linearly 4.6 mW/ 0 C above T A > +25 0 C
2) Derate linearly 1 7.0 mW/ 0 C above T C > +25 0 C


TO- 39* (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A


TO-5*
2N2218AL,
2N2219AL
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I E = 10 mAdc 2N2218; 2N2219
2N2218A; L; 2N2219A; L
V (BR)CEO

30
50

Vdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc 2N2218; 2N2219
V EB = 6.0 Vdc 2N2218A; L; 2N2219A; L
V EB = 4.0 Vdc All Type s
I EBO

10
10
10
µAdc
ηAdc
Collector - Base Cutoff Current
V CE = 30 Vdc 2N2218; 2N2219
V CE = 50 Vdc 2N2218A; L; 2N2219A; L
I CES



10
10
ηAdc


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120101
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