1N914
器件描述:Silicon Switching Diode DO-35 Glass Package
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器件资料摘要:
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Applications
Used in general purpose applications, where performance and switching
speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
Full approval to Mil-S-19500/116
Available up to JANTXV levels
"S" level screening available to SCDs
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage PIV 100 (Min.) Volts
Average Rectified Current I
Avg
75 mAmps
Continuous Forward Current I
Fdc
300 mAmps
Peak Surge Current (t
peak
= 1 sec.) I
peak
0.5 Amp
Power Dissipation @ T
L
=50
o
C, L = 3/8" from body P
tot
250 mWatts
Storage & Operating Temperature Range T
St & Op
-65 to +200
o
C
Electrical Characteristics @ 25
o
C* Symbol Absolute Limits Unit
Breakdown Voltage @ Ir = 0.1 mA PIV 100 (Min) Volts
Reverse Leakage Current @ V
R
= 20 V I
R
0.025 (Max) µA
Reverse Leakage (Vr =20 V, 150
o
C) I
R
50 (Max) µA
Reverse Leakage Current @ V
R
= 75 V I
R
5.0 (Max) µA
Capacitance @ V
R
= 0 V, f = 1mHz C
T
4.0 (Max) pF
Reverse Recovery Time (note 1) t
rr
4.0 (Max) nSecs
Forward Recovery Time (note 2) V
fr
2.5 (Max) Volts
Note 1: I
F
= 10 mA, R
L
= 100 Ohms, Vr = 6.0 Volts , Irr =1.0 mA
Note 2: I
F
= 50 mA dc
*UNLESS OTHERWISE SPECIFIED
Silicon Switching Diode DO-35 Glass Package
1N914
or
1N914-1
DO-35 Glass Package
Dia.
0.06-0.09"
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08- mm
1.53-2.28 mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.