AAT9460
30V N-Channel Power MOSFET
Preliminary Information
9460.2003.10.0.63 1
General Description
The AAT9460 is a low threshold MOSFET designed
for applications in DC-DC Converter, battery, cell
phone, and PDA markets. Using AnalogicTech™'s
ultra-high density proprietary TrenchDMOS™ tech-
nology, this product demonstrates high power han-
dling and small size.
Applications
• DC-DC Converters
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
Features
•V
DS(MAX)
= 30V
•I
D(MAX)
1
= 3.4A @ 25°C
• Low R
DS(ON)
:
• 58 mΩ @ V
GS
= 4.5V
• 84 mΩ @ V
GS
= 2.5V
SC59 Package
D
GS
Top View
12
3
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Value Units
R
θJA
Typical Junction-to-Ambient steady state
1
140
R
θJA2
Maximum Junction-to-Ambient t<5 seconds
1
115 °C/W
R
θJF
Typical Junction-to-Foot
1
45
Symbol Description Value Units
V
DS
Drain-Source Voltage 30
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±3.4
T
A
= 70°C ±2.7
A
I
DM
Pulsed Drain Current
2
±8.0
I
S
Continuous Source Current (Source-Drain Diode)
1
1.0
P
D
Maximum Power Dissipation
1
T
A
= 25°C 1.1
W
T
A
= 70°C 0.7
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C