Silicon Junction FETs (Small Signal)
1
Publication date: April 2002 SJF00034AED
2SK3427
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
a73 Features
• High mutual conductance g
m
• Low noise voltage of NV
a73 Absolute Maximum Ratings T
a
= 25°C
1: Drain
2: Source
3: Gate
MiniT3-F1 Package
Unit: mm
Parameter Symbol Rating Unit
Drain-source voltage V
DSO
20 V
Drain-gate voltage V
DGO
20 V
Drain-source current I
DSO
2mA
Drain-gate current I
DGO
Gate-source current I
GSO
2mA
Allowable power dissipation P
D
200 mW
Operating ambient temperature T
opr
−20 to

+80 °C
Storage temperature T
stg
−55 to

+150 °C
Marking Symbol: 5E
Parameter Symbol Conditions Min Typ Max Unit
Drain current I
D
V
DS
= 2.0 V, R
D
= 2.2 kΩ ± 1% 100 460 µA
I
DSS
V
DS
= 2.0 V, R
D
= 2.2 kΩ ± 1%, V
GS
= 0 107 470
Mutual conductance g
m
V
D
= 2.0 V, V
GS
= 0, f = 1 kHz 660 1 600 µS
Noise voltage NV V
D
= 2.0 V, R
D
= 2.2 kΩ ± 1% 10 µV
C
O
= 5 pF, A-Curve
Voltage gain G
V1
V
D
= 2.0 V, R
D
= 2.2 kΩ ± 1% −7.5 −4.7 dB
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
G
V2
V
D
= 12 V, R
D
= 2.2 kΩ ± 1% −4.0 −1.5
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
G
V3
V
D
= 1.5 V, R
D
= 2.2 kΩ ± 1% −8.0 −5.0
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
∆G
V
. f
*
V
D
= 2.0 V, R
D
= 2.2 kΩ ± 1% 0 1.7
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz to 70 Hz
Voltage gain difference G
V2
− G
V1
 04.0dB
G
V1
− G
V3
 017
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
: ∆G
V
. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
–0.05
+0.10
0.40 –0.01
+0.02
0.12
2.1
±
0.1
1.5
±
0.2
2.20
±
0.15
0.7
±
0.1
5.8
±
0.2
2.9±0.2
1.9±0.1
(0.95)
(0.5)
(0.95)
2
3
1
10˚
5
˚