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1N6742

器件描述:TRANSIENT VOLTAGE SUPPRESOR
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:60.06KB,共2页
Sponsor by e络盟
器件资料摘要:
DESCRIPTION SYMBOL MAX. UNIT
Peak Power Dissipation Ppp 5000 Watts
tclamping :0 volts to VBR min (theoretical) < 1 picosecond
Forward Surge Rating, 1/120 sec @25 °C I FSM 200 Amps
Junction Temperature Range T j -65 to +175 °C
Storage Temperature Range T stg -65 to +175 °C
Thermal Resistance, Junction to Case: θJC 0.65 °C/W
PRELIMINARY
1N6742, R
17 Volts
200 Amps
5KW
Features

• Passivated mesa structure for very low leakage currents
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• 5000 Watts peak power
• Very low thermal resistance
• Available as standard polarity (strap-to-anode) and
reverse “R” polarity (strap-to-cathode)
Maximum Ratings @ 25°C (unless otherwise specified)
Datasheet# MSC1328.PDF
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
TRANSIENT
VOLTAGE
SUPPRESOR
Mechanical Outline
Slugger1 (DO-217AA)
Note: Polarity symbol shown
Applies to 1N6742.