2SB0789
器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：88.75KB，共3页
Sponsor by e络盟器件资料摘要：
Transistors
1
Publication date: December 2002 SJC00056CED
2SB0789, 2SB0789A (2SB789, 2SB789A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Large collector power dissipation P
C
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45˚
2.6
±
0.1
0.4 max.
1.6±0.2 1.5±0.1
4.0
2.5
±
0.1
3˚
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08 0.4±0.040.4±0.08
12
3
1.5±0.1
3˚
Parameter Symbol Rating Unit
Collector-base voltage 2SB0789 V
CBO
−100 V
(Emitter open) 2SB0789A −120
Collector-emitter voltage 2SB0789 V
CEO
−100 V
(Base open) 2SB0789A −120
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
− 0.5 A
Peak collector current I
CP
−1A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol:
• 2SB0789: D
• 2SB0789A: E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Note)
*
: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion.
Note) The part number in the parenthesis shows conventional part number.
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0789 V
CEO
I
C
= −100 µA, I
B
= 0 −100 V
(Base open)
2SB0789A −120
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= −10 V, I
C
= −150 mA 90 220
h
FE2
V
CE
= −5 V, I
C
= −500 mA 50
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.2 − 0.6 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.85 −1.20 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 30 pF
(Common base, input open circuited)
Rank Q R
h
FE1
90 to 155 130 to 220
1
Publication date: December 2002 SJC00056CED
2SB0789, 2SB0789A (2SB789, 2SB789A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Large collector power dissipation P
C
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45˚
2.6
±
0.1
0.4 max.
1.6±0.2 1.5±0.1
4.0
2.5
±
0.1
3˚
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08 0.4±0.040.4±0.08
12
3
1.5±0.1
3˚
Parameter Symbol Rating Unit
Collector-base voltage 2SB0789 V
CBO
−100 V
(Emitter open) 2SB0789A −120
Collector-emitter voltage 2SB0789 V
CEO
−100 V
(Base open) 2SB0789A −120
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
− 0.5 A
Peak collector current I
CP
−1A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol:
• 2SB0789: D
• 2SB0789A: E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Note)
*
: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion.
Note) The part number in the parenthesis shows conventional part number.
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0789 V
CEO
I
C
= −100 µA, I
B
= 0 −100 V
(Base open)
2SB0789A −120
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= −10 V, I
C
= −150 mA 90 220
h
FE2
V
CE
= −5 V, I
C
= −500 mA 50
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.2 − 0.6 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.85 −1.20 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 30 pF
(Common base, input open circuited)
Rank Q R
h
FE1
90 to 155 130 to 220