Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1008
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
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© 2002
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −2.0 A
Collector current (pulse) IC(pulse) PW ≤ 300 µs,
duty cycle ≤ 10%
−4.0 A
Base current (DC) IB(DC) −1.0 A
TC = 25°C 15 WTotal power dissipation PT
TA = 25°C 1.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SA1008 TO-220AB
(TO-220AB)