2S2M
器件资料摘要：
1998©
Document No. D13535EJ2V0DS00 (2nf edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
2S2M, 2S4M
2 A HIGH-SPEED SWITCHING SCR
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
FEATURES
• This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol 2S2M 2S4M Ratings Unit
Non-repetitive peak reverse voltage VRSM 300 500 V RGK = 1 kΩ
Non-repetitive peak off-state voltage VDSM 300 500 V RGK = 1 kΩ
Repetitive peak reverse voltage VRRM 200 400 V RGK = 1 kΩ
Repetitive peak off-voltage VDRM 200 400 V RGK = 1 kΩ
Average on-state current IT(AV) 2 (Tc = 77°C, Single half-wave, θ = 180°)ARefer to Figure 6 snd 7.
Surge on-state current ITSM 20 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2.
High-frequency peak on-state current ITRM 15 (Tc = 65°C, f = 10 kp.p.s, tp = 10 µs) A −
Fusing current ∫ it
2
dt 1.6 (1 ms≤t≤10 ms) A
2
s −
Critical rate of rise of on-state current dIT/dt 50 A/µs −
Peak gate power dissipation PGM 0.5 (f≥50 Hz, Duty≤10%) W −
Average gate power dissipation PG(AV) 0.1 W
Peak gate forward current IFGM 0.2 (f≥50 Hz, Duty≤10%) A −
Peak gate reverse voltage VRGM 6V−
Junction temperature Tj −40 to +125 °C −
Storage temperature Tstg −55 tp +150 °C −
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
Document No. D13535EJ2V0DS00 (2nf edition)
Date Published April 2002 N CP(K)
Printed in Japan
THYRISTORS
2S2M, 2S4M
2 A HIGH-SPEED SWITCHING SCR
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
FEATURES
• This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol 2S2M 2S4M Ratings Unit
Non-repetitive peak reverse voltage VRSM 300 500 V RGK = 1 kΩ
Non-repetitive peak off-state voltage VDSM 300 500 V RGK = 1 kΩ
Repetitive peak reverse voltage VRRM 200 400 V RGK = 1 kΩ
Repetitive peak off-voltage VDRM 200 400 V RGK = 1 kΩ
Average on-state current IT(AV) 2 (Tc = 77°C, Single half-wave, θ = 180°)ARefer to Figure 6 snd 7.
Surge on-state current ITSM 20 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2.
High-frequency peak on-state current ITRM 15 (Tc = 65°C, f = 10 kp.p.s, tp = 10 µs) A −
Fusing current ∫ it
2
dt 1.6 (1 ms≤t≤10 ms) A
2
s −
Critical rate of rise of on-state current dIT/dt 50 A/µs −
Peak gate power dissipation PGM 0.5 (f≥50 Hz, Duty≤10%) W −
Average gate power dissipation PG(AV) 0.1 W
Peak gate forward current IFGM 0.2 (f≥50 Hz, Duty≤10%) A −
Peak gate reverse voltage VRGM 6V−
Junction temperature Tj −40 to +125 °C −
Storage temperature Tstg −55 tp +150 °C −
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark