TECHNICAL DATA

NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/624
Devices Qualified Level
2N7370




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector - Emitter Voltage V CEO 100 Vdc
Collector - B ase Voltage V CBO 100 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Base Current I B 0.2 Adc
Collector Current I C 12 Adc
Total Power Dissipation @ T C = +25 0 C (1) P T 100 W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +175 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.5 0 C/W
1) Derate linearly 0.667 W/ 0 C above T C > +25 0 C






TO - 254*
*See Appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 100 mAdc

V CEO ( sus )

100

Vdc
Collector - Emitter Cutoff Current
V CE = 50 Vdc

I CEO

1.0

mAdc
Collector - Emitter Cutoff Current
V CE = 100 Vdc, V BE = 1.5 Vdc

I CEX

0.5

mAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc

I EBO

2.0

mAdc

6 Lake Street, Lawrence, MA 01841
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