Specifications and information are subject to change without notice

WJ Communications, Inc a0 Phone 1-800-WJ1-4401 a0 FAX: 408-577-6621 a0 e-mail: sales@wj.com a0 Web site: www.wj.com Page 1 of 7 May 2005
AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Edge TM
Product Features

x 1800 – 2300 MHz
x +28.5 dBm P1dB
x +44 dBm Output IP3
x 14 dB Gain @ 1960 MHz
x +5V Single Positive Supply
x MTTF > 100 Years
x Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.

Applications
x Mobile Infrastructure
x Final Stage Amplifier for
Repeaters
Product Description

The AH115 / ECP050 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050 is available in lead-free/green/RoHS-compliant
SOIC-8 package.

The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.

Functional Diagram














Function Pin No.
Vref 1
Input / Base 3
Output / Collector 6, 7
Vbias 8
GND Backside Paddle
N/C or GND 2, 4, 5
Specifications (1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 1800 2300
Test Frequency MHz 2140
Gain dB 12.5 14.4
Input Return Loss dB 23
Output Return Loss dB 8
Output P1dB dBm +26.5 +28.5
Output IP3 (2) dBm +41 +42
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz dBm +22.5
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz dBm +20
Noise Figure dB 5.3
Operating Current Range (3) mA 200 250 300
Device Voltage V +5

1. Test conditions unless otherwise noted. 25ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.





Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 qC
Storage Temperature -65 to +150 qC
RF Input Power (continuous) +22 dBm
Device Voltage +8 V
Device Current 400 mA
Device Power 2 W
Junction Temperature +250 qC

Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameters Units Typical
Frequency MHz 1960 2140
Gain dB 14.3 14.4
S11 dB -12 -23
S22 dB -8 -8
Output P1dB dBm +28.3 +28.5
Output IP3 (2) dBm +44 +42
IS-95A Channel Power
@ -45 dBc ACPR, dBm +22.5
W-CDMA Channel Power
@ -45 dBc ACLR dBm +20
Noise Figure dB 5 5.3
Supply Bias +5 V @ 250 mA












Ordering Information
Part No. Description
AH115-S8 ½ Watt, High Linearity InGaP HBT Amplifier (lead-tin SOIC-8 Pkg)
ECP050G ½ Watt, High Linearity InGaP HBT Amplifier (lead-tin SOIC-8 Pkg)
AH115-S8G ½ Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH115-S8PCB1960 1960 MHz Evaluation Board
AH115-S8PCB2140 2140 MHz Evaluation Board
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2


3


4
8

7

6

5