1
Item Symbol Rating Unit
Drain-source voltage VDS 1000
Continuous drain current ID ±7
Pulsed drain current ID(puls] ±28
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 7
Maximum Avalanche Energy EAV *1 463
Max. power dissipation PD 255
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3337-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=1000V
VGS=±30V
ID=3.5A VGS=10V
ID=3.5A VDS=25V
VCC=600V ID=7A
VGS=10V
RGS=10 W
Min. Typ. Max. Units
V
V
µA
mA
nA
W
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.490
50.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
Vcc=500V
ID=7A
VGS=10V
L=17.3 mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
W
°C
°C
*1 L=17.3mH, Vcc=100V *2 Tch=150°C
100
2.5 3.0 3.5
10 500
0.2 1.0
10 100
1.54 2.0
2.7 5.5
1480 2220
170 255
75 113
25 38
50 75
160 240
70 105
84 126
23 35
31 47
7
1.00 1.50
1.6
15.0
-55 to +150
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