2SB1732
Transistors
Rev.A 1/2
Genera purpose amplification(−12V, −1.5A)
2SB1732


zApplication
Low frequency amplifier
Driver


zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −200mV
at IC = −500mA / IB = −25mA



zExternal dimensions (Unit : mm)
(1)Base
(2)Emitter
(3)Collector
0.3
0.770.17
0.15Max.
2.01.3
0.65
0.65
(3)
(
1
)
(
2
)
1.7 0.20.2
2.1
0~0.1
0.85Max.
ROHM : TUMT3 Abbreviated symbol : EV



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−15
−12
−6
−1.5
400
150
−55 to +150
−3
∗1
Unit
V
V
V
A
A
mW
°C
°C
∗2
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, PW=1ms
Each Terhinal Mounted on a Recommended Land


zPackaging specifications
2SB1732
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping







zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=−10V, IE=0A, f=1MHz
fT − 400 − MHz VCE=−2V, IE=200mA, f=100MHz
BVCBO −15 −−V IC=−10µA
BVCEO −12 −−V IC=−1mA
BVEBO −6 −−V IE=−10µA
ICBO −−−100 nA VCB=−15V
IEBO −−−100 nA VEB=−6V
VCE(sat) −−85 −200 mV IC=−500mA, IB=−25mA
hFE 270 − 680 − VCE=−2V, IC=−200mA
Cob − 12 − pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed