BS62LV8001
器件描述:Very Low Power/Voltage CMOS SRAM 1M X 8 bit
文件大小:265.68KB,共9页
Sponsor by e络盟
器件资料摘要:
Revision 2.1
Jan. 2004
1
R0201-BS62LV8001
Very Low Power/Voltage CMOS SRAM
1M X 8 bit
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 75mA (@55ns) operating current
I -grade: 76mA (@55ns) operating current
C-grade: 60mA (@70ns) operating current
I -grade: 61mA (@70ns) operating current
8.0uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
The BS62LV8001 is a high performance , very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 8 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
1.5uA at 3V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable(CE1)
, an active HIGH chip enable (CE2) and active LOW output enable (OE)
and three-state output drivers.
The BS62LV8001 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV8001 is available in 48B BGA and 44L TSOP2 packages.