Revision 1.1
Jan. 2004
1
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616LV4016EC
BS616LV4016EI
R0201-BS616LV4016
POWER DISSIPATION
SPEED
(
ns )
STANDBY
( I CCSB1 , Max ) ( I CC , Max )
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
3.0V 3.0V
PKG TYPE
BS616LV4016DC
DICE
BS616LV4016EC
TSOP2-44
BS616LV4016AC BGA-48-0608
+0
O
C to +70
O
C 2.4V ~ 3.6V 55 / 70
6.0uA 25mA
BS616LV4016DI
DICE
BS616LV4016EI TSOP2-44
BS616LV4016AI BGA-48-0608
-40
O
C to +85
O
C 2.4V ~ 3.6V 55 / 70 8.0uA 27mA
Very Low Power/Voltage CMOS SRAM
256K X 16 bit
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 25mA (@55ns) operating current
I -grade: 27mA (@55ns) operating current
C-grade: 17mA (@70ns) operating current
I -grade: 18mA (@70ns) operating current
0.45uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns (Max.) at Vcc = 2.7~3.6V / 85
o
C
-70 70ns (Max.) at Vcc = 2.4~3.6V / 85
o
C
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
The BS616LV4016 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA at 3.0V/25
o
C and maximum access time of 55ns at 2.7V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV4016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4016 is available in DICE form , JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
„ DESCRIPTION
„ FEATURES
Row
Decoder
Memory Array
2048 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A9 A8 A7
Data
Buffer
Input
Control
Gnd
Vcc
OE
WE
CE
DQ15
DQ0
A0
A13
A14
A15
A1
A2
16
16
16
16
14
128
2048
„ BLOCK DIAGRAM
204822
A17
A16
A10
A12
A6A11
A3
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
BS616LV4016
A4
BSI
Operating
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
Vcc = Vcc =
17mA
18mA
55ns 70ns
55ns: 2.7~3.6V
70ns: 2.4~3.6V