FEATURES:
• High Gain Bandwidth Product
f
t
= 10 GHz typ @ I
C
= 10 mA
• Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
• High Gain
|S
21
|
2
= 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T
A
= 25
o
C)
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
BIPOLARICS, INC. Part Number B12V105
SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX.
V
CE
=8V, I
C
= 10 mA unless stated
V
CBO
Collector-Base Voltage 20 V
V
CEO
Collector-Emitter Voltage 12 V
V
EBO
Emitter-Base Voltage 1.5 V
I
C CONT
Collector Current 40 mA
T
J
Junction Temperature 200
o
C
T
STG
Storage Temperature -65 to 150
o
C
SYMBOL PARAMETERS RATING UNITS
Absolute Maximum Ratings:
Insertion Power Gain: f = 1.0 GHz, I
C
= 10 mA 17.5
I
C
= 25 mA 18.1
f = 2.0 GHz, I
C
= 10 mA 12.8
I
C
= 25 mA 12.6
NF Noise Figure: V
CE
=8V, I
C
= 2mA f = 1.0 GHz dB 1.6
Z
S
= 50Ω
C
CB
Collector Base Capacitance: V
CB
= 8V f = 1MHz pF 0.11
I
CBO
Collector Cutoff Current : V
CB
=8V µA 0.2
V
CE
= 8V, I
C
= 10 mA
f
t
|S
21
|
2
Gain Bandwidth Product GHz 10
P
1dB
Power output at 1dB compression: f = 1.0 GHz dBm 12
G
1dB
Gain at 1dB compression: f = 1.0 GHz dBm 15
h
FE
Forward Current Transfer Ratio: f = 1MHz 50 100 250
I
EBO
Emitter Cutoff Current : V
EB
=1V µA 1.0
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V105 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
B12V105 an excellent choice for battery applications. From
10 mA to greater than 25 mA, f
t
is nominally 10 GHz.
Maximum recommended continuous current is 40 mA. A
broad range of packages are offered including SOT-23, SOT-
143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and
unencapsulated dice.