1264D–FLASH–5/03
8-megabit
(512K x 16/
1M x 8)
5-volt Only
Flash Memory
AT49F8011
AT49F8011T
Not Recommended
for New Designs
Features
4.5V to 5.5V Read/Write
Access Time - 70 ns
Sector Erase Architecture
– Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout
– Two 16K Word (32K Byte) Sectors with Individual Write Lockout
– Two 8K Word (16K Byte) Sectors with Individual Write Lockout
– Four 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time - 10 µs
Fast Sector Erase Time - 200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
– Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors
– Memory Plane B: Fourteen 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
–40 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
Description
The AT49F8011(T) is a 5.0 volt 8-megabit Flash memory organized as 524,288 words
of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 -
I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for
erase operations. The device is offered in 48-pin TSOP and 48-ball CBGA packages.
The device has CE, and OE control signals to avoid any bus contention. This device
can be read or reprogrammed using a single 5.0V power supply, making it ideally
suited for in-system programming.
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
RDY/BUSY READY/BUSY Output
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1) I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE Selects Byte or Word Mode
NC No Connect
DC Don’t Connect
1