Symbol Units
V
DS V
V
GS V
T
A
=25°C
T
A
=70°C
I
DM
V
KA V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG °C
Symbol Units
R
θJL
R
θJL
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
97
63
75
R
θJA
90Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
125
125
Maximum Junction-to-Lead
C
Steady-State 63
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t ≤ 10s
Parameter
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
3
A2
40
Continuous Drain Current
A
Gate-Source Voltage
Schottky
Drain-Source Voltage
I
F
75
Thermal Characteristics Schottky
90
75
73
96
Max
°C/W
°C/W
MOSFET
-30
±12
-4.2
-3.5
-30
1.4
Pulsed Drain Current
B
Junction and Storage Temperature Range
1.4
W
Schottky reverse voltage 30
11Power Dissipation
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Rev 1: Oct 2004
Features
V
DS
(V) = -30V
I
D
= -4.2A
R
DS(ON)
< 50mΩ (V
GS
= 10V)
R
DS(ON)
< 65mΩ (V
GS
= 4.5V)
R
DS(ON)
< 120mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO8701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
TSSOP-8
G
S
S
D
A
A
A
K1
2
3
4
8
7
6
5
G
D
S
A
K
Alpha & Omega Semiconductor, Ltd.