Symbol
V
DS
V
GS
I
DM
I
AV
E
AV
T
J
, T
STG
Symbol Typ Max
23 40
48 65
R
θJL
12 16Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
B
Power Dissipation
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
A
Maximum Junction-to-Ambient
A
Steady-State
12
10
80
Avalanche Current
B,E
30
Repetitive Avalanche Energy
B,E
L=0.1mH 100
I
D
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
30
mJ
W
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
AO4408, AO4408L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 3: June 2004
Features
V
DS
(V) = 30V
I
D
= 12A
R
DS(ON)
< 13mΩ (V
GS
= 10V)
R
DS(ON)
< 16mΩ (V
GS
= 4.5V)
General Description
The AO4408 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and fast
switching. This device makes an excellent high side
switch for notebook CPU core DC-DC conversion.
AO4408L(Green Product) is offered in a lead-free
package.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.