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2SC4897

器件描述:Silicon NPN Triple Diffused
器件厂商:HITACHI [Hitachi Semiconductor]
文件大小:21.62KB,共4页
Sponsor by e络盟
器件资料摘要:
Application
Character Display Horizontal Deflection Output
Features
• High speed switching time: 0.5 µs max
• High breakdown voltage, high current:
V
CBO
= 1500 V, I
C
= 20 A
• Suitable for large size CRT Display
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
———————————————————————————————————————————
Collector to base voltage V
CBO
1500 V
———————————————————————————————————————————
Collector to emitter voltage V
CEO
800 V
———————————————————————————————————————————
Emitter to base voltage V
EBO
6V
———————————————————————————————————————————
Collector current I
C
20 A
———————————————————————————————————————————
Collector surge current ic(surge) 25 A
———————————————————————————————————————————
Collector power dissipation P
C
*1
150 W
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
Note: 1. Value at T
C
= 25°C.
TO–3PL
1. Base
2. Collector
3. Emitter
1
2
3
2SC4897
Silicon NPN Triple Diffused