2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. WINTransceiver B C E Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER75VBase Voltage, VCBO 80VEmitter- EBO 5VCollector Current, IC ContinuousPeak 3A5ACollector Power Dissipation (TA = +25°C), PD 1.2WC = +50°C), P 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter SymbolTest Conditions MinTypMaxUnitCollector-Base Breakdown Voltage V(BR)CBOIC = 100µA, IB = 0 80 - - V Emitter Breakdown Voltage (BR)CER = 1mA, RBE = 150 Ohm 75 Emitter-Base Breakdown Voltage (BR)EBOIE = 100µA, IC = 0 5 - - Collector Cutoff Current ICBO VCB = 40V IE - 10 µA Emitter Cutoff Current EBO EB = 4V, IC = 0 - DC Current Gain hFE CE = 5V, I = 0.5A 25 200Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.150.60V Base BE(sat) 0.91.2 Current Gain-Bandwidth Product fT CE = 10V, IC = 0.1A 100150- MHzOutput Capacitance Cob VCB = 10V, f = 1MHz 25 - Power Output PO 4.0 - W Collector Efficiency CC = 12V, Pin = 0.2W, f = 27MHz60 - %