TECHNICAL DATA

NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/99
Devices Qualified Level
2N696
2N696S
2N697
2N697S







MAXIMUM RATINGS
Ratings Symbol Value Units
Collector - Base Voltage
V
CBO

60 Vdc
Emitter - Base Vol tage
V
EBO

5.0 Vdc
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)

P
T

0.6
2.0
W
W
Operating & Storage Junction Temperature Range
T
J ,
T
stg

- 65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case
R
θJC

0.075
0
C/mW
1) Derate linearly 4.0 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 13.3 mW/
0
C for T
C
> 25
0
C


*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage

R
BE
= 10 Ω, I
C
= 100 mAdc
V
(BR) CER


40
Vdc
Collector - Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 30 Vdc
I
CBO


10
0.1
µAdc
Emitter - Base Cutoff Cu rrent
V
EB
= 7.0 Vdc
I
EBO



10
µAdc
ON CHARACTERISTICS
(3)

Forward - Current Transfer Ratio
I
C
= 150 mAdc, V
CE
= 10 Vdc 2N696,s
2N697,s
I
C
= 500 mAdc, V
CE
= 10 Vdc 2N696,s
2N697,s
h
FE


20
40
12.5
20.0

60
120
Collector - Emitter Saturation Vo ltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
CE(sat)


0.3

1.5
Vdc
Base - Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
BE(sat)



1.3
Vdc

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120101
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TO-5*
JAN