Power Transistors
1
Publication date: April 2003 SJD00080BED
2SB1504
Silicon PNP epitaxial planar type darlington
For power switching
• High forward current transfer ratio h
FE
• High-speed switching
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank P Q R
h
FE1
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
10.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90˚
2.5
±
0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−50 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−8A
Peak collector current I
CP
−12 A
Collector power dissipation P
C
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −30 mA, I
B
= 0 −50 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −50 V, I
E
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −7 V, I
C
= 0 −2mA
Forward current transfer ratio h
FE1
*
V
CE
= −3 V, I
C
= −4 A 1 000 10 000 
h
FE2
V
CE
= −3 V, I
C
= −8 A 500
Collector-emitter saturation voltage V
CE(sat)
I
C
= −4 A, I
B
= −8 mA −1.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −4 A, I
B
= −8 mA −2.0 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 0.5 A, f = 200 MHz 20 MHz
Turn-on time t
on
I
C
= −4 A, I
B1
= −8 mA, I
B2
= 8 mA 0.5 µs
Storage time t
stg
V
CC
= −50 V 2.0 µs
Fall time t
f
1.0 µs