2SK3078A
2002-01-09 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3078A

VHF/UHF Band Amplifier Applications



Gb7G20 Output power: P
o
≥ 28.0dBmW
Gb7G20 Gain: G
p
≥ 8.0dB
Gb7G20 Drain Efficiency: ηD ≥ 50%

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
10 V
Gate-source voltage V
GSS
5 V
Drain current I
D
0.5G20 A
Power dissipation P
D
(Note 1) 3 W
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−45~150 °C
Note 1: Tc = 25°C

Marking



Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Output power P
O
28.0 GbeG20 Gbe dBmW
Drain efficiency ηD 50 Gbe Gbe %
Power gain G
p

V
DS
= 4.5 V, Iidle = 50 mA
(V
GS
= adjust)
f = 470 MHz, P
i
= 20dBmW
Z
G
= Z
L
== 50 Ω
8.0 Gbe Gbe dB
Threshold voltage V
th
V
DS
= 4.8 V, I
D
= 0.5 mA 0.20 Gbe 1.20 V
Drain cut-off current I
DSS
V
DS
= 10 V, V
GS
= 0 V Gbe Gbe 10 µA
Gate-source leakage current I
GSS
V
GS
= 5 V, V
DS
= 0 V Gbe Gbe 5 µA
Load mismatch (Note 2) Gbe
V
DS
= 6.5 V, f = 470 MHz,
P
i
= 20dBmW,
P
o
= 28.0dBmW (V
GS
= adjust)
VSWR LOAD 10:1 all phase
No degradation Gbe
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used

Unit: mm


JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1D

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