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0R8GU41

器件描述:TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
器件厂商:TOSHIBA [Toshiba Semiconductor]
文件大小:131.06KB,共3页
Sponsor by e络盟
器件资料摘要:
0R8GU41
2002-09-17 1
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
0R8GU41

HIGH SPEED RECTIFIER APPLICATIONS
(FAST RECOVERY)


G6cG20Average Forward Current : I
F (AV)
= 0.8A (Ta = 40°C)
G6cG20Repetitive Peak Reverse Voltage : V
RRM
= 400V
G6cG20Reverse Recovery Time : t
rr
= 100ns (Max)
G6cG20Plastic Mold Type



MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage V
RRM
400 V
Average Forward Current
(Ta = 40°C)
I
F (AV)
0.8 A
30 (50H
z
)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
I
FSM
33 (60H
z
)
A
Junction Temperature T
j
−40~150 °C
Storage Temperature Range T
stg
−40~150 °C

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN MAX UNIT
Peak Forward Voltage V
FM
I
FM
= 1.0A ― 1.5 V
Repetitive Peak Reverse Current I
RRM
V
RRM
= 400V ― 50 µA
Reverse Recovery Time t
rr
I
F
= 1.0A, di / dt = −30A / µs ― 100 ns
Forward Recovery Time t
fr
I
F
= 1.0A ― 200 ns
Thermal Resistance R
th (j−a)
Junction to Ambient ― 115 °C / W
Thermal Resistance R
th (j−ℓ)
Junction to Lead ― 45 °C / W

MARKING

Unit: mm



JEDEC DO−41
JEITA ―
TOSHIBA 3−3C1A
Weight: 0.3g