1. General description
The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device.
The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates.
2. Features
a73 Symmetrical output impedance
a73 High noise immunity
a73 ESD protection:
a78 HBM EIA/JESD22-A114-B exceeds 2000 V
a78 MM EIA/JESD22-A115-A exceeds 200 V
a78 CDM EIA/JESD22-C101 exceeds 1000 V.
a73 Low power dissipation
a73 Balanced propagation delays
a73 Multiple package options
a73 Specified from −40 °Cto+80°C and from −40 °C to +125 °C.
3. Quick reference data
74AHC2G08; 74AHCT2G08
Dual 2-input AND gate
Rev. 02 — 18 October 2004 Product data sheet
Table 1: Quick reference data
GND = 0 V; T
amb
=25°C; t
r
=t
f
≤ 3.0 ns.
Symbol Parameter Conditions Min Typ Max Unit
Type 74AHC2G08
t
PHL
, t
PLH
propagation delay
A and B to Y
C
L
= 15 pF; V
CC
= 5 V - 3.2 5.9 ns
C
I
input capacitance - 1.5 10 pF
C
PD
power dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz
[1] [2]
-17-pF