BUL116D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
a73 INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
APPLICATIONS:
a73 COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS
a73 FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
AT 110 V A.C. MAINS
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 400 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 200 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 9 V
I
C
Collector Current 5 A
ICM Collector Peak Current (tp < 5 ms) 10 A
I
B
Base Current 2 A
I
BM
Base Peak Current (t
p
< 5 ms) 4 A
P
tot
Total Dissipation at T
c
= 25
o
C60W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
®
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