BS62UV1027DC
器件描述:Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
文件大小:434.42KB,共10页
Sponsor by e络盟
器件资料摘要:
Revision 2.1
Jan. 2004
1
R0201-BS62UV1027
Ultra Low Power/Voltage CMOS SRAM
128K X 8 bit
• Wide Vcc operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
(Vcc_min.=1.65V at 25
o
C)
• Ultra low power consumption :
Vcc = 2.0V C-grade : 7mA (Max.) operating current
I -grade : 8mA (Max.) operating current
0.05uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade : 13mA (Max.) operating current
I- grade : 15mA (Max.) operating current
0.10uA (Typ.) CMOS standby current
• High speed access time :
-85 85ns (Max.)
-10 100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
The BS62UV1027 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.05uA at 2.0V/25
o
C and maximum access time of 85ns at 85
o
C.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV1027 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV1027 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.