TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525
Devices Qualified Level
2N6546 2N6547




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6546 2N6547 Units
Collector - Emitter Voltage V CEO 300 400 Vdc
Collector - B ase Voltage V CEX 600 850 Vdc
Emitter - Base Voltage V EBO 8 Vdc
Base Current I B 10 Adc
Collector Current I C 15 Adc
Total Power Dissipation @ T C = +25 0 C (1)
@ T C = +100 0 C (1) P T
175
100
W
W
Operating & Storage Temp erature Range T op, T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.0 0 C/W
1) Between T C = +25 0 C and T C = +200 0 C, linear derating factor (average) = 1.0 W/ 0 C




TO-3 (TO-204AA)*
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 100 mAdc 2N6546
2N6547
V (BR) CEO 300
400
Vdc
Collector - Emitter Cutoff Current
V CE = 600 Vdc; V BE = 1.5 Vdc 2N6546
V CE = 850 Vdc; V BE = 1.5 Vdc 2N6547
I CEX 1.0
1.0
mAdc
Emitter - Base Cutoff Current
V EB = 8 Vdc I EBO 1.0 mAdc
6 Lake Street, Lawrence, MA 01841
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