TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/466
Devices Qualified Level
2N5683 2N5684




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N5683 2N5684 Unit
Collector - Emitter Voltage V CEO 60 80 Vdc
Collector - Base Voltage V CBO 60 80 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Base Current I B 15 Adc
Collector Current I C 50 Adc
Total Power Dissipation (1) @ T C = 25 0 C
@ T C = 100 0 C P T
300
171
W
W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 0.584 0 C/W
1) Derate linearly 1.715 W/ 0 C between T C = +25 0 C and T C = +200 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N5683
2N5684
V (BR) CEO

60
80

Vdc
Collector - Emitter Cutoff Current
V CE = 30 Vdc 2N5683
V CE = 40 Vdc 2N568 4
I CEO

5.0
5.0
µAdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc, V BE = 1.5 Vdc 2N5683
V CE = 80 Vdc, V BE = 1.5 Vdc 2N5684
I CEX

5.0
5.0
µAdc
Collector - Base Cutoff Current
V CB = 60 Vdc 2N5683
V CB = 80 Vdc 2N5684
I CBO

5.0
5.0
µAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc I EBO
5.0 µAdc

6 Lake Street, Lawrence, MA 01841
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120101
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TO - 3*
(TO - 204AA)