2N5551 / MMBT5551
2N5551 MMBT5551
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 600 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5551 *MMBT5551
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 °C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 3S
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 2000 Fairchild Semiconductor International 2N5551/MMBT5551 Rev A