器件资料摘要：
VP2020L, BSS92
Vishay Siliconix
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
www.vishay.com
11-1
P-Channel 200-V (D-S) MOSFETs
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
(BR)DSS
Min (V) r
DS(on)
Max (C0087) V
GS(th)
(V) I
D
(A)
VP2020L –200 20 @ V
GS
= –4.5 V –0.8 to –2.5 –0.12
BSS92 –200 20 @ V
GS
= –10 V –0.8 to –2.8 –0.15
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 High-Side Switching
C0068 Secondary Breakdown Free: –220 V
C0068 Low On-Resistance: 11.5 C0087
C0068 Low-Power/Voltage Driven
C0068 Excellent Thermal Stability
C0068 Ease in Driving Switches
C0068 Full-Voltage Operation
C0068 Low Offset Voltage
C0068 Easily Driven Without Buffer
C0068 No High-Temperature
“Run-Away”
C0068 Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
C0068 Power Supply, Converters
C0068 Motor Control
C0068 Switches
“S” VP
2020L
xxyy
TO-92-18CD
(TO-18 Lead Form)
Top View
S
G
D
1
2
3
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
BSS92VP2020L
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
“S” BS
S92
xxyy
“S” = Siliconix Logo
xxyy = Date Code
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083C0032C0040C0084
C0065
C0032C0061C0032C0050C0053C0095C0067C0032C0085C0078C0076C0069C0083C0083C0032C0079C0084C0072C0069C0082C0087C0073C0083C0069C0032C0078C0079C0084C0069C0068C0041
Parameter Symbol VP2020L BSS92 Unit
Drain-Source Voltage V
DS
–200 –200
Gate-Source Voltage V
GS
C003420 C003420
V
C0095
T
A
= 25C0095C –0.12 –0.15
Continuous Drain Current (T
J
= 150 C)
T
A
= 100C0095C
I
D
–0.08 –0.09 A
Pulsed Drain Current
a
I
DM
–0.48 –0.6
T
A
= 25C0095C 0.8 1.0
Power Dissipation
T
A
= 100C0095C
P
D
0.32 0.4
W
Thermal Resistance, Junction-to-Ambient R
thJA
156 125 C0095C/W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150 C0095C
Notes
a. Pulse width limited by maximum junction temperature.
Vishay Siliconix
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
www.vishay.com
11-1
P-Channel 200-V (D-S) MOSFETs
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
(BR)DSS
Min (V) r
DS(on)
Max (C0087) V
GS(th)
(V) I
D
(A)
VP2020L –200 20 @ V
GS
= –4.5 V –0.8 to –2.5 –0.12
BSS92 –200 20 @ V
GS
= –10 V –0.8 to –2.8 –0.15
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 High-Side Switching
C0068 Secondary Breakdown Free: –220 V
C0068 Low On-Resistance: 11.5 C0087
C0068 Low-Power/Voltage Driven
C0068 Excellent Thermal Stability
C0068 Ease in Driving Switches
C0068 Full-Voltage Operation
C0068 Low Offset Voltage
C0068 Easily Driven Without Buffer
C0068 No High-Temperature
“Run-Away”
C0068 Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
C0068 Power Supply, Converters
C0068 Motor Control
C0068 Switches
“S” VP
2020L
xxyy
TO-92-18CD
(TO-18 Lead Form)
Top View
S
G
D
1
2
3
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
BSS92VP2020L
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
“S” BS
S92
xxyy
“S” = Siliconix Logo
xxyy = Date Code
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083C0032C0040C0084
C0065
C0032C0061C0032C0050C0053C0095C0067C0032C0085C0078C0076C0069C0083C0083C0032C0079C0084C0072C0069C0082C0087C0073C0083C0069C0032C0078C0079C0084C0069C0068C0041
Parameter Symbol VP2020L BSS92 Unit
Drain-Source Voltage V
DS
–200 –200
Gate-Source Voltage V
GS
C003420 C003420
V
C0095
T
A
= 25C0095C –0.12 –0.15
Continuous Drain Current (T
J
= 150 C)
T
A
= 100C0095C
I
D
–0.08 –0.09 A
Pulsed Drain Current
a
I
DM
–0.48 –0.6
T
A
= 25C0095C 0.8 1.0
Power Dissipation
T
A
= 100C0095C
P
D
0.32 0.4
W
Thermal Resistance, Junction-to-Ambient R
thJA
156 125 C0095C/W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150 C0095C
Notes
a. Pulse width limited by maximum junction temperature.