BFP650
Mar-27-2003
1
NPN Silicon Germanium RF Transistor
Preliminary data
G01 For high power amplifiers
G01 Ideal for low phase noise oscilators
G01 Maxim. available Gain G
ma
= 21 dB at 1.8 GHz
Noise figure F = 0.9 dB at 1.8 GHz
G01 Gold metallization for high reliability
G01 70 GHz f
T
- Silicon Germanium technology
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP650 R5s
1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
4 V
Collector-emitter voltage V
CES
13
Collector-base voltage V
CBO
13
Emitter-base voltage V
EBO
1.2
Collector current I
C
150 mA
Base current I
B
10
Total power dissipation
1)

T
S
G01 75°C
P
tot
500 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
R
thJS
G01 140
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance