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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

ASISD1905

器件描述:HF/VHF POWER MOSFET N-Channel Enhancement Mode
器件厂商:ASI [Advanced Semiconductor]
文件大小:15.41KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25°C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
DSS
I
D
= 10 mA 65 V
I
DSS
V
DS
= 28 V V
GS
= 0 V 5.0 mA
I
GSS
V
DS
= 0 V V
GS
= 20 V 1.0 µA
g
fs
I
D
= 10 A V
DS
= 10 V .7 mohs
C
iss
C
oss
C
rss

V
DS
= 28 V V
GS
= 0 V f = 1.0 MHz


80
70
20
pF
P
G

η
D

V
DD
= 28 V I
DQ
= 25 mA P
out
= 45 W
f = 150 MHz
12
50
dB
%

HF/VHF POWER MOSFET
N-Channel Enhancement Mode
SD1905
DESCRIPTION:
The ASI SD1905 is Designed for
General Purpose Class-A,B Power
Amplifier Applications up to 200 MHz.

FEATURES:
• P
G
= 13 dB Typical at 200 MHz
• Common Source Configuration
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
D
8.4 A
V
(BR)DSS
65 V
V
DGR
65 V
V
GS
± 20 V
P
DISS
117 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.5 °C/W
PACKAGE STYLE .380 4L FLG



















MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H .160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J .240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
S
S
D
G